Toshiba MG75Q2YS50 — Toshiba, IGBT Module Diode, 1200 V, 100 A, 93.5 x 35 x
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Part Specification
| Brand / Manufacturer | Toshiba |
|---|---|
| Product type | Safety and General Automation |
Description
Toshiba, IGBT Module Diode, 1200 V, 100 A, 93.5 x 35 x 32 mm
The MG75Q2YS50 is a high-power diode module manufactured by Toshiba. With a voltage rating of 1200 V and a maximum current of 100 A, this module is designed to handle large amounts of power with ease. The diode module measures 93.5 x 35 x 32 mm in size, making it compact and suitable for various applications.
Toshiba has implemented advanced technology in the design of the MG75Q2YS50 to ensure optimal performance and reliability. The module utilizes Insulated Gate Bipolar Transistor (IGBT) technology, meaning it combines the benefits of both bipolar junction transistors and metal-oxide-semiconductor field-effect transistors. This allows the module to have high voltage capability, low saturation voltage, and fast switching speeds.
The diode module is constructed using high-quality and durable materials to ensure long-lasting operation. It is built to withstand harsh operating conditions and can handle high temperatures without compromising its performance. The compact size of the module also allows for easy integration into various electronic systems.
The MG75Q2YS50 diode module is suitable for use in a wide range of applications, including motor drives, power supplies, industrial equipment, and renewable energy systems.
Full 12-month warranty
All parts new or reconditioned are covered by K2 Automation 12 month warranty
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