Toshiba MG25Q6ES42 — Toshiba, IGBT Transistor Module, 2.5 V, 50 A, 1200 V
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Part Specification
| Brand / Manufacturer | Toshiba |
|---|---|
| Product type | Safety and General Automation |
Description
Toshiba, IGBT Transistor Module, 2.5 V, 50 A, 1200 V
The MG25Q6ES42 Toshiba is a robust and efficient IGBT transistor module designed for various power applications. With a voltage rating of 1200 V and a current capability of 50 A, this module is built to handle high-power requirements with ease.
The Toshiba MG25Q6ES42 offers a low on-state voltage drop, enabling efficient power conversion. This feature not only improves overall system performance but also reduces power loss and improves energy efficiency. The module operates at a nominal supply voltage of 2.5 V, making it suitable for a wide range of applications.
Designed with reliability in mind, the MG25Q6ES42 Toshiba module incorporates advanced technology and high-quality materials to ensure long-term operation and durability. It features a compact and sturdy design that can withstand harsh environmental conditions and provide consistent performance under various loads.
The module is equipped with overcurrent and over-temperature protection circuits, which safeguard against potential damage due to excessive current or temperature. These protective features enhance system safety and prevent catastrophic failures.
Installation of the MG25Q6ES42 module is straightforward, thanks to its user-friendly design and comprehensive documentation. It is manufactured with precision, and all components are thoroughly tested to meet strict quality standards.
Full 12-month warranty
All parts new or reconditioned are covered by K2 Automation 12 month warranty
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No hassle returns policy
No hassle returns policy. Dedicated customer support team
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