Toshiba GT15Q101
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Part Specification
Brand / Manufacturer |
Toshiba |
---|---|
Product type |
Safety and General Automation |
Description
Toshiba, IGBT Transistor Module, Single, 1200 V, 15 A
The GT15Q101 Toshiba IGBT Transistor Module is a high-performance electronic component designed for power conversion applications. This module features a single IGBT (Insulated Gate Bipolar Transistor) with a high voltage rating of 1200 V and a current capacity of 15 A, making it suitable for a wide range of power control systems.
The IGBT technology employed in this module offers the advantages of both MOSFETs (metal-oxide-semiconductor field-effect transistors) and bipolar junction transistors. It provides low on-state voltage drop and high switching speed, allowing for efficient switching and negligible power losses. The ability to handle high voltages and currents makes this module ideal for various applications, including motor drives, industrial inverters, uninterruptible power supplies (UPS), and renewable energy systems.
The GT15Q101 IGBT Transistor Module is built with robust construction and incorporates advanced thermal management techniques to ensure reliable performance and effective heat dissipation. It is provided with a built-in temperature sensor that can be used for monitoring the module's internal temperature, preventing it from exceeding its maximum working limit.
Full 12-month warranty
All parts new or reconditioned are covered by K2 Automation 12 month warranty
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